Non-Contact Characterization of Recombination Processes in 4H-SiC∗
نویسنده
چکیده
Carrier decay transients in 4H-SiC n-type and p-type epilayers have been characterized using a non-destructive, non-contact microwave photoconductivity technique. Decay transients show a two-stage exponential decay with first decay constants as high as 400 ns in 10 μm p-type epilayers. The second decay constant increases with temperature and is dominated by interface recombination.
منابع مشابه
Carrier Lifetime Relevant Deep Levels In SiC
Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. These defects provide energy levels within the bandgap and may act...
متن کاملNanosecond Risetime Pulse Characterization of SiC pn Junction Diode Breakdown and Switching Properties
Single-shot nanosecond risetime pulse testing of SiC devices is demonstrated to reveal unique and highly crucial device performance information not obtainable by conventional DC and RF electrical testing. This paper describes some strikingly important device behaviors observed during pulse-testing experiments of 4H-SiC pn junction diodes. Specific observations include: 1) a remarkably fast and ...
متن کاملCHARACTERIZATION OF 4H-SiC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION
Title of Thesis: CHARACTERIZATION OF 4H-SiC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION Siddharth Potbhare Master of Science, 2005 Thesis directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering Detailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving the steady state semiconductor Drift-Diffusio...
متن کاملAb initio study of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials
The annealing kinetics of mobile intrinsic defects in cubic SiC is investigated by an ab initio method based on density-functional theory. The interstitial-vacancy recombination, the diffusion of vacancies, and interstitials to defect sinks ~e.g., surfaces or dislocations! as well as the formation of interstitial clusters are considered. The calculated migration and reaction barriers suggest a ...
متن کاملTemperature and Stress Simulation of 4H-SiC during Laser-Induced Silicidation for Ohmic Contact Generation
We report here on the simulation of temperature and stress evolution of 4H-SiC during laser-induced silicidation to locally generate ohmic contacts between the semiconductor and nickel metallization. The simulation is based on optical free carrier absorption, thermal conduction, and thermal radiation. Our results show that, during laser irradiation, similar temperatures and correspondingly simi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2000